TAV College receives a 2-year FRQNT grant for research
Hybrid Opto-Electronic Structures by Direct Integration of Compound Semiconductors and Graphene
The recent discovery of graphene and its unique structural and physical properties has sparked a surge of interest in implementing this new material in a variety of new devices, targeting applications in ultra-fast electronics, quantum information, carbon-free energy conversion, optoelectronics, and bio-integrated technologies. However, this fascinating material lacks a controlled non-zero bandgap, which prevents its large scale application in electronic and energy conversion devices. To overcome this limitation, we proposed the direct integration of III-V semiconductors on graphene by exploiting van der Waals epitaxy. Due to their fascinating optical and electronic properties, III-V semiconductors are at the core of numerous technologies including high-efficiency solar cells, lasers, light emitting diodes (LEDs), and ultra-fast transistors, to name a few. Growth of III-V on graphene is an attractive paradigm to develop hybrid systems with novel or enhanced functionalities combining the advantages of these two families of materials within the same platform. Indeed, the development of the proposed hybrid III-V/Graphene structures will create wealth of opportunities to engineer a new class of electronic and optoelectronic devices combining the adventages of both III-V semiconductors and graphene.
This research project seeks to improve our understanding of the van der Waals epitaxial growth mechanism of III-V semiconductors on graphene, which will provide insights to control the properties of such hybrid systems and pave the way to engineering new device structures with potential applications in nano/optoelectronics.
This research will be in collaboration with Polytechnique Montréal, University of Montréal, Concordia University, and University of Wisconsin. It will involve one MSc student, as well as four TAV students.
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